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Photovoltaic Systems To252 Package Osg80r900df N-Channel 800W 900V Power Mosfet
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Basic Info.Product DescriptionCertifications
Basic Info.
| Model NO. | OSG80R900DF |
| Cooling Method | Air Cooled Tube |
| Function | Switch Transistor |
| Working Frequency | High Frequency |
| Structure | Planar |
| Encapsulation Structure | Plastic Sealed Transistor |
| Power Level | Medium Power |
| Material | Silicon |
| Transport Package | Carton |
| Specification | 35x30x37cm |
| Trademark | Orientalsemi |
| Origin | China |
| HS Code | 8541290000 |
| Production Capacity | Over 1K/Month |
| Package Size | 59.00cm * 34.00cm * 15.00cm |
| Package Gross Weight | 19.000kg |
| Package Size | 59.00cm * 34.00cm * 15.00cm |
| Package Gross Weight | 19.000kg |
Product Description
Product Description
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General Description
The
high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformity
Applications
LED
lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
General Description
The
high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformityApplications
LED
lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
The
high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformity
Applications
LED
lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
General Description
The
high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformityApplications
LED
lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
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Green Product Declaration
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Certifications
Name:专利奖励
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Photovoltaic Systems To252 Package Osg80r900df N-Channel 800W 900V Power Mosfet
$0.1 ~ $0.5
Consumer electronics Industry Chain · Electronic tube and transistor · Other Electronic Tubes
Model NO.:OSG80R900DF
Transport Package:Carton
Origin:China
Shanghai 
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