General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity
Ultra-fast and robust body diode
AEC-Q101 Qualified for Automotive Application
Applications
PC power
Telecom power
Server power
EV Charger
Motor driver
Parameter
Value
Unit
VDS
650
V
ID, pulse
96
A
RDS(ON), max @ VGS=10V
99
mΩ
Qg
66.6
nC
Product Name
Package
Marking
OSG65R099HSZAF
TO247
OSG65R099HSZA
Symbol
Drain-source voltage
Gate-source voltage
VGS
±30
Continuous drain current1), TC=25 °C
ID
32
Continuous drain current1), TC=100 °C
20
Pulsed drain current2), TC=25 °C
Continuous diode forward current1), TC=25 °C
IS
Diode pulsed current2), TC=25 °C
IS, pulse
Power
dissipation3)
,TC=25
°C
PD
278
W
Single pulsed avalanche energy5)
EAS
648
mJ
MOSFET dv/dt ruggedness, VDS=0…480 V
dv/dt
50
V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID
Operation and storage temperature
Tstg, Tj
-55 to 150
Thermal resistance, junction-case
RθJC
0.45
°C/W
Thermal resistance, junction-ambient4)
RθJA
62
Dynamic Characteristics
Gate Charge Characteristics
Body Diode Characteristics
Note
Calculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.