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EV Extral Fast Charging Piles DC-DC High Power Interleaved LLC Topologies Fast Recovery Diode Frd Osg60r030hzf To247 Power Mosfet
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Basic Info.Product DescriptionCertifications
Basic Info.
| Model NO. | OSG60R030HZF TO247 |
| Cooling Method | Air Cooled Tube |
| Function | Microwave Transistor, Switch Transistor |
| Working Frequency | High Frequency |
| Structure | Planar |
| Encapsulation Structure | Plastic Sealed Transistor |
| Power Level | Medium Power |
| Material | Silicon |
| Description | Extremely Low Switching Loss |
| Characteristics | Excellent Stability and Uniformity |
| Applications | PC Power |
| Industries | LED Lighting |
| Type | Fast EV Charging Station |
| Warranty | 24 Months |
| Transport Package | Carton |
| Specification | TO247 |
| Trademark | Orientalsemiconductor |
| Origin | Chi |
| HS Code | 854129000 |
| Production Capacity | 20K/Monthly |
| Package Size | 59.00cm * 34.00cm * 15.00cm |
| Package Gross Weight | 18.000kg |
| Package Size | 59.00cm * 34.00cm * 15.00cm |
| Package Gross Weight | 18.000kg |
Product Description
Product Description
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General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Ultra-fast and robust body diode
Applications
PC power
Telecom power
Server power
EV Charger
Motor driver
Key Performance Parameters
Marking Information
Dynamic Characteristics
Gate Charge Characteristics
Body Diode Characteristics
Note
Calculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Ultra-fast and robust body diode
Applications
PC power
Telecom power
Server power
EV Charger
Motor driver
Key Performance Parameters
Marking Information
Dynamic Characteristics
Gate Charge Characteristics
Body Diode Characteristics
Note
Calculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.
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Certifications
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EV Extral Fast Charging Piles DC-DC High Power Interleaved LLC Topologies Fast Recovery Diode Frd Osg60r030hzf To247 Power Mosfet
$0.2
Consumer electronics Industry Chain · Electronic tube and transistor · Other Electronic Tubes
Model NO.:OSG60R030HZF TO247
Transport Package:Carton
Origin:Chi
Shanghai 
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