Vienna Topology Vds, High Voltage Power Mosfet-Bincial.com

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Vienna Topology Vds, High Voltage Power Mosfet

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Basic Info.Product DescriptionCertifications

Basic Info.

Model NO.	OSG65R035HTF TO247
Cooling Method	Air Cooled Tube
Function	Switch Transistor
Working Frequency	High Frequency
Structure	Planar
Encapsulation Structure	Plastic Sealed Transistor
Power Level	Medium Power
Material	Silicon
Description	Extremely Low Switching Loss
Characteristics	Excellent Stability and Uniformity
Applications	PC Power
Industries	LED Lighting
Type	Fast EV Charging Station
Warranty	24 Months
Transport Package	Carton
Specification	TO247
Trademark	Orientalsemiconductor
Origin	Chi
HS Code	854129000
Production Capacity	20K/Monthly
Package Size	59.00cm * 34.00cm * 15.00cm
Package Gross Weight	19.000kg
Package Size	59.00cm * 34.00cm * 15.00cm
Package Gross Weight	19.000kg

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General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications

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