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基本信息产品详情证书
基本信息
型号编号 | OSG65R035HTF TO247 |
冷却方法 | 风冷管 |
功能 | 开关晶体管 |
工作频率 | 高频 |
结构 | 平面 |
封装结构 | 塑料密封晶体管 |
权力等级 | 中功率 |
材料 | 硅 |
描述 | 极低开关损耗 |
特点 | 卓越的稳定性和均匀性 |
应用程序 | PC电源 |
行业 | LED照明 |
类型 | 快速电动汽车充电站 |
保修 | 24个月 |
交通包 | 纸箱 |
规格 | TO247 |
商标 | 氧化半导体 |
起源 | 中国 |
商品编码 | 854129000 |
生产能力 | 每月2万美金 |
包装尺寸 | 59.00厘米*34.00厘米*15.00厘米 |
包装总重量 | 19.000千克 |
包装尺寸 | 59.00厘米*34.00厘米*15.00厘米 |
包装总重量 | 19 千克 |
产品详情
Product Description
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General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
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证书
标题:专利奖



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