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基本信息产品详情证书
基本信息
型号 | TO220F OSG55R190FF |
冷却方法 | 风冷管 |
功能 | 开关晶体管 |
工作频率 | 高频 |
结构 | 平面的 |
封装结构 | 芯片晶体管 |
权力等级 | 高功率 |
材料 | 硅 |
P/N:产品编号(Product Number) | Osg55r190FF |
打包 | To220f |
应用程序1 | PC粉末 |
应用程序2 | LED灯 |
运输包 | 纸箱 |
规格 | 35x30x37厘米 |
商标 | 指在身体方位或行为方面的差异表现 |
起源 | 中国 |
商品编码 | 8541290000 |
生产能力 | 月入超百万 |
包装尺寸 | 59.00厘米×39.00厘米×16.00厘米 |
包装总重量 | 19.000公斤 |
包装大小 | 59.00厘米×39.00厘米×16.00厘米 |
包装总重量 | 19 吨 |
产品详情
Product Description
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General
Description
The
GreenMOS®
high
voltage
MOSFET
utilizes
charge
balance
technology
to
achieve
outstanding low
on-resistance
and
lower
gate
charge. It
is
engineered
to
minimize
conduction
loss,
provide superior
switching
performance
and
robust
avalanche
capability.
The
GreenMOS®
Generic
series
is
optimized
for
extreme
switching
performance
to
minimize switching
loss.It
is
tailored
for
high
power
density
applications
to
meet
the
highest
efficiency standards.
Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and uniformity
Applications
PC
power
LED
lighting
Telecom
power
Server
power
EV
Charger
Solar/UPS
Key
Performance
Parameters
Absolute
Maximum
Ratings
at
Tj=25°C unless otherwise noted
Thermal
Characteristics
Electrical
Characteristics
at
Tj=25°C
unless
otherwise
specified
Gate
Charge
Characteristics
Body
Diode
Characteristics
Note1)
Calculated
continuous
current
based
on
maximum
allowable
junction
temperature.2)
Repetitive
rating; pulse
width
limited
by
max. junction
temperature.3)
Pd
is
based
on
max. junction
temperature, using
junction-case
thermal
resistance.4)
The
value
of
RθJA
is
measured
with
the
device
mounted
on
1 in
2 FR-4 board
with
2oz. Copper,
in
a
still
air
environment
with
Ta=25 °C.5)
VDD=100 V, VGS=10 V, L=10 mH, starting
Tj=25 °C.Ordering
Information
Product
Information
Supply Chain
Description
The
GreenMOS®
high
voltage
MOSFET
utilizes
charge
balance
technology
to
achieve
outstanding low
on-resistance
and
lower
gate
charge. It
is
engineered
to
minimize
conduction
loss,
provide superior
switching
performance
and
robust
avalanche
capability.
The
GreenMOS®
Generic
series
is
optimized
for
extreme
switching
performance
to
minimize switching
loss.It
is
tailored
for
high
power
density
applications
to
meet
the
highest
efficiency standards.
Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and uniformity
Applications
PC
power
LED
lighting
Telecom
power
Server
power
EV
Charger
Solar/UPS
Key
Performance
Parameters
Absolute
Maximum
Ratings
at
Tj=25°C unless otherwise noted
Thermal
Characteristics
Electrical
Characteristics
at
Tj=25°C
unless
otherwise
specified
Gate
Charge
Characteristics
Body
Diode
Characteristics
Note1)
Calculated
continuous
current
based
on
maximum
allowable
junction
temperature.2)
Repetitive
rating; pulse
width
limited
by
max. junction
temperature.3)
Pd
is
based
on
max. junction
temperature, using
junction-case
thermal
resistance.4)
The
value
of
RθJA
is
measured
with
the
device
mounted
on
1 in
2 FR-4 board
with
2oz. Copper,
in
a
still
air
environment
with
Ta=25 °C.5)
VDD=100 V, VGS=10 V, L=10 mH, starting
Tj=25 °C.Ordering
Information
Product
Information
Supply Chain
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证书
标题:专利奖励



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To220f Osg55r190FF Vds-600V ID-60A N沟道功率MOSFET
¥2.17 ~ ¥9.41
消费电子产业链 · 电子管及晶体管 · 其他电子管及晶体管
型号TO220F OSG55R190FF
产地中国