To220f Osg55r190FF Vds-600V ID-60A N沟道功率MOSFET-缤商

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To220f Osg55r190FF Vds-600V ID-60A N沟道功率MOSFET

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基本信息产品详情证书

基本信息

型号	TO220F OSG55R190FF
冷却方法	风冷管
功能	开关晶体管
工作频率	高频
结构	平面的
封装结构	芯片晶体管
权力等级	高功率
材料	硅
P/N：产品编号（Product Number）	Osg55r190FF
打包	To220f
应用程序1	PC粉末
应用程序2	LED灯
运输包	纸箱
规格	35x30x37厘米
商标	指在身体方位或行为方面的差异表现
起源	中国
商品编码	8541290000
生产能力	月入超百万
包装尺寸	59.00厘米×39.00厘米×16.00厘米
包装总重量	19.000公斤
包装大小	59.00厘米×39.00厘米×16.00厘米
包装总重量	19 吨

产品详情

Product Description

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General
Description
The
GreenMOS®
high
voltage
MOSFET
utilizes
charge
balance
technology
to
achieve
outstanding low
on-resistance
and
lower
gate
charge. It
is
engineered
to
minimize
conduction
loss,
provide superior
switching
performance
and
robust
avalanche
capability.
The
GreenMOS®
Generic
series
is
optimized
for
extreme
switching
performance
to
minimize switching
loss.It
is
tailored
for
high
power
density
applications
to
meet
the
highest
efficiency standards.
Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and uniformity
Applications
PC
power
LED
lighting
Telecom
power
Server
power
EV
Charger
Solar/UPS
Key
Performance
Parameters
Absolute
Maximum
Ratings
at
Tj=25°C unless otherwise noted
Thermal
Characteristics
Electrical
Characteristics
at
Tj=25°C
unless
otherwise
specified
Gate
Charge
Characteristics
Body
Diode
Characteristics
Note1)
Calculated
continuous
current
based
on
maximum
allowable
junction
temperature.2)
Repetitive
rating; pulse
width
limited
by
max. junction
temperature.3)
Pd
is
based
on
max. junction
temperature, using
junction-case
thermal
resistance.4)
The
value
of
RθJA
is
measured
with
the
device
mounted
on
1 in
2 FR-4 board
with
2oz. Copper,
in
a
still
air
environment
with
Ta=25 °C.5)
VDD=100 V, VGS=10 V, L=10 mH, starting
Tj=25 °C.Ordering
Information
Product
Information
Supply Chain

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