N通道800瓦900伏功率MOSFET器件（双252封装）Osg80r900df-缤商

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N通道800瓦900伏功率MOSFET器件（双252封装）Osg80r900df

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基本信息产品详情证书

基本信息

型号编号	OSG80R900DF TO252-1
材料	元素半导体
模型	装货单
包裹	SMD
信号处理	模拟数字复合与功能
类型	N型半导体
应用程序1	LED照明
应用程序2	电动汽车充电器
P/N	Osg80r900df
包装	To252
品牌	东方萨米
运输包	纸箱
规格说明	35x30x37厘米
商标	奥瑞安赛米
起源	中国
商品编码	8541290000
生产能力	每月收入超过一千元
包装尺寸	59.00厘米×39.00厘米×16.00厘米
包装总重量	19000千克
包装尺寸	59.00cm * 39.00cm * 16.00cm
包装总重量	19.000千克

产品详情

Product Description

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General
Description
The GreenMOS®
high voltage
MOSFET
utilizes charge
balance technology to
achieve
outstanding
low
on-resistance
and
lower
gate
charge.It
is
engineered
to
minimize
conduction
loss,
provide
superior switching
performance and
robust avalanche capability.
The
GreenMOS®
Generic
series
is
optimized
for
extreme
switching
performance
to
minimize
switching
loss.It
is
tailored
for
high
power
density
applications
to
meet
the
highest
efficiency standards.
Features
.Low
RDS(ON)
&
FOM
.Extremely
low switching
loss
.Excellent stability and
uniformity
Applications
.PC
power
.LED
lighting
.Telecom
power
.Server
power
.EV
Charger
.Solar/UPS
Key Performance
Parameters
General
DescriptionThe GreenMOS®
high voltage
MOSFET
utilizes charge
balance technology to
achieve
outstanding
low
on-resistance
and
lower
gate
charge.It
is
engineered
to
minimize
conduction
loss,
provide
superior switching
performance and
robust avalanche capability.The
GreenMOS®
Generic
series
is
optimized
for
extreme
switching
performance
to
minimize
switching
loss.It
is
tailored
for
high
power
density
applications
to
meet
the
highest
efficiency standards.Features.Low
RDS(ON)
&
FOM.Extremely
low switching
loss.Excellent stability and
uniformityApplications.PC
power.LED
lighting.Telecom
power.Server
power.EV
Charger.Solar/UPSKey Performance
Parameters
Marking
Information
Parameter
Symbol
Value
Unit
Drain-source voltage
VDS
800
V
Gate-source voltage
VGS
±30
Continuous
drain
current1)
, TC=25
°C
ID
5
A
, TC=100
3.2
Pulsed
current2)
ID,
pulse
15
diode
forward
IS
Diode
pulsed
IS,
Power
dissipation3)
, TC=25 °C
PD
63
W
Single pulsed avalanche
energy5)
EAS
160
mJ
MOSFET
dv/dt
ruggedness, VDS=0…640 V
50
V/ns
Reverse
dv/dt, VDS=0…640 V,
ISD≤ID
Operation and storage temperature
Tstg, Tj
-55 to
150
Thermal resistance,
junction-case
RθJC
2
°C/W
junction-ambient4)
RθJA
62
Dynamic Characteristics
Gate Charge Characteristics
Body Diode Characteristics
Note1)
Calculated continuous current
based
on
maximum
allowable junction temperature.2)
Repetitive
rating;
pulse width
limited
by
max. junction temperature.3)
Pd
is
based on
max. junction temperature,
using junction-case thermal resistance.4)
The
value
of
RθJA
is
measured
with
the
device
mounted
on
1
in
2
FR-4
board
with
2oz.Copper,
in
a
still
air
environment
with
Ta=25
°C.5)
VDD=100 V, VGS=10 V,
L=60
mH, starting
Tj=25
°C.Supply Chain

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