General Description
The
high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformity
Applications
LED
lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
General Description
The
high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.Features
Low
RDS(ON) &
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformityApplications
LED
lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
Key Performance
Parameters
Parameter
Value
Unit
VDS,
min
@ Tj(max)
850
V
ID,
pulse
45
A
RDS(ON)
,
max
@ VGS=10V
300
mΩ
Qg
23.3
nC
Marking
Information
Product
Name
Package
Marking
OSG80R300JF
PDFN
8×8
OSG80R300J
Package &
Pin
Information
Parameter
Symbol
Value
Unit
Drain-source voltage
VDS
800
V
Gate-source voltage
VGS
±30
Continuous
drain
current1)
, TC=25
°C
ID
15
A
, TC=100
9.5
Pulsed
current2)
ID,
pulse
45
diode
forward
IS
Diode
pulsed
IS,
Power
dissipation3)
, TC=25 °C
PD
151
W
Single pulsed avalanche
energy5)
EAS
360
mJ
MOSFET
dv/dt
ruggedness, VDS=0…480 V
50
V/ns
Reverse
dv/dt, VDS=0…480 V,
ISD≤ID
Operation and storage temperature
Tstg, Tj
-55 to
150
Thermal resistance,
junction-case
RθJC
0.83
°C/W
Thermal resistance, junction-ambient4)
RθJA
62
Dynamic Characteristics
Parameter
Symbol
Min.Typ.Max.Unit
Test condition
Input capacitance
Ciss
1552
pF
VGS=0 V,VDS=50 V,ƒ=100
kHz
Output capacitance
Coss
80.1
pF
Reverse transfer capacitance
Crss
2.1
pF
Turn-on delay time
td(on)
33.6
ns
VGS=10 V,VDS=400 V,RG=2
Ω,ID=7.5 A
Rise time
tr
20.3
ns
Turn-off delay time
td(off)
57.9
ns
Fall time
tf
4.5
ns
Gate Charge Characteristics
Parameter
Symbol
Min.Typ.Max.Unit
Test condition
Total gate
charge
Qg
22.7
nC
VGS=10 V,VDS=400 V,ID=7.5 A
Gate-source charge
Qgs
8.6
nC
Gate-drain charge
Qgd
2.3
nC
Gate plateau
voltage
Vplateau
5.5
V
Body Diode
Characteristics
Parameter
Symbol
Min.Typ.Max.Unit
Test condition
Diode forward voltage
VSD
1.3
V
IS=15 A,VGS=0 V
Reverse recovery time
trr
313.7
ns
VR
=400 V,IS=7.5 A,di/dt=100 A/μs
Reverse recovery charge
Qrr
4.2
μC
Peak
reverse
recovery current
Irrm
25.2
A
Note1)
Calculated continuous current
based
on
maximum
allowable junction temperature.2)
Repetitive
rating;
pulse width
limited
by
max. junction temperature.3)
Pd
is
based on
max. junction temperature,
using junction-case thermal resistance.4)
The
value
of
RθJA
is
measured
with
the
device
mounted
on
1
in
2
FR-4
board
with
2oz.Copper,
in
a
still
air
environment
with
Ta=25
°C.5)
VDD=100 V, VGS=10 V,
L=80
mH, starting
Tj=25
°Supply Chain

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